CSD17579Q5A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CSD17579Q5A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 14 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 5.4 nC
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 95 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0097 Ohm
Тип корпуса: SON5X6
Аналог (замена) для CSD17579Q5A
CSD17579Q5A Datasheet (PDF)
csd17579q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q5ASLPS524 MARCH 2015CSD17579Q5A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.4 nC Avalanche Rated
csd17579q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q3ASLPS527 SEPTEMBER 2014CSD17579Q3A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.3 nC Avalanche Rat
csd17573q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17573Q5BSLPS492A JUNE 2014 REVISED FEBRUARY 2015CSD17573Q5B 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Ultra-Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V
csd17575q3.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17575Q3SLPS489A JUNE 2014 REVISED AUGUST 2014CSD17575Q3 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC
csd17571q2.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17571Q2SLPS393A OCTOBER 2013 REVISED JANUARY 2015CSD17571Q2 30V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V)
csd17570q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17570Q5BSLPS471C FEBRUARY 2014 REVISED FEBRUARY 2015CSD17570Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low ResistanceTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Tot
csd17577q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17577Q5ASLPS516 AUGUST 2014CSD17577Q5A 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V) 13 nC Pb Free Termi
csd17577q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17577Q3ASLPS515 AUGUST 2014CSD17577Q3A 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V) 12 nC Pb Free Qgd G
csd17578q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17578Q5ASLPS526 MARCH 2015CSD17578Q5A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 7.9 nC Avalanche Rated
csd17576q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17576Q5BSLPS497 JUNE 2014CSD17576Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain -to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 25 nC Avalanche Rated Qgd
csd17578q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17578Q3ASLPS525 SEPTEMBER 2014CSD17578Q3A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 7.9 nC Avalanche Rat
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