CSD18503KCS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CSD18503KCS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 188 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 15 nC
trⓘ - Время нарастания: 5.3 ns
Cossⓘ - Выходная емкость: 480 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO-220
Аналог (замена) для CSD18503KCS
CSD18503KCS Datasheet (PDF)
csd18503kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18503KCSSLPS368A SEPTEMBER 2012 REVISED JANUARY 2015CSD18503KCS 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Tota
csd18503q5a.pdf
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18503Q5ASLPS358C JUNE 2012 REVISED JUNE 2015CSD18503Q5A 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 40 V Avalanche RatedQg Gate ch
csd18509q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18509Q5BSLPS476 JUNE 2014CSD18509Q5B N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low On ResistanceTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (10 V) 150 nC Logic Leve
csd18501q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18501Q5ASLPS319C JUNE 2012 REVISED JANUARY 2015CSD18501Q5A 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (4
csd18504q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18504Q5ASLPS366E JUNE 2012 REVISED SEPTEMBER 2014CSD18504Q5A 40-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total
csd18504kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18504KCSSLPS365A OCTOBER 2012 REVISED FEBRUARY 2015CSD18504KCS 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total
csd18502q5b.pdf
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18502Q5BSLPS320A NOVEMBER 2012 REVISED JULY 2015CSD18502Q5B 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain to source voltage 40 V Avalanche RatedQg Gate
csd18502kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18502KCSSLPS367B AUGUST 2012 REVISED JULY 2014CSD18502KCS 40-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (10V
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