CSD18504Q5A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CSD18504Q5A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7.7 nC
Время нарастания (tr): 6.8 ns
Выходная емкость (Cd): 310 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0066 Ohm
Тип корпуса: SON5X6
Аналог (замена) для CSD18504Q5A
CSD18504Q5A Datasheet (PDF)
csd18504q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18504Q5ASLPS366E JUNE 2012 REVISED SEPTEMBER 2014CSD18504Q5A 40-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total
csd18504kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18504KCSSLPS365A OCTOBER 2012 REVISED FEBRUARY 2015CSD18504KCS 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total
csd18509q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18509Q5BSLPS476 JUNE 2014CSD18509Q5B N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low On ResistanceTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (10 V) 150 nC Logic Leve
csd18501q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18501Q5ASLPS319C JUNE 2012 REVISED JANUARY 2015CSD18501Q5A 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (4
csd18503kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18503KCSSLPS368A SEPTEMBER 2012 REVISED JANUARY 2015CSD18503KCS 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Tota
csd18502q5b.pdf
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18502Q5BSLPS320A NOVEMBER 2012 REVISED JULY 2015CSD18502Q5B 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain to source voltage 40 V Avalanche RatedQg Gate
csd18503q5a.pdf
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18503Q5ASLPS358C JUNE 2012 REVISED JUNE 2015CSD18503Q5A 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 40 V Avalanche RatedQg Gate ch
csd18502kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18502KCSSLPS367B AUGUST 2012 REVISED JULY 2014CSD18502KCS 40-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (10V
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