CSD18533KCS
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CSD18533KCS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 192
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 100
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 4.8
ns
Cossⓘ - Выходная емкость: 300
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0063
Ohm
Тип корпуса:
TO-220
- подбор MOSFET транзистора по параметрам
CSD18533KCS
Datasheet (PDF)
..1. Size:467K texas
csd18533kcs.pdf 

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18533KCSSLPS362C SEPTEMBER 2012 REVISED JUNE 2015CSD18533KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Ga
6.1. Size:1358K texas
csd18533q5a.pdf 

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18533Q5ASLPS388B SEPTEMBER 2012 REVISED JANUARY 2015CSD18533Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Tota
7.1. Size:751K texas
csd18532kcs.pdf 

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532KCSSLPS361B AUGUST 2012 REVISED JULY 2014CSD18532KCS 60-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10
7.2. Size:395K texas
csd18537nkcs.pdf 

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NKCSSLPS390A JUNE 2013 REVISED MARCH 2015CSD18537NKCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1
7.3. Size:358K texas
csd18535kcs.pdf 

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18535KCSSLPS531 MARCH 2015CSD18535KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 63 nC Pb-Free T
7.4. Size:898K texas
csd18531q5a.pdf 

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18531Q5ASLPS321E JUNE 2012 REVISED AUGUST 2015CSD18531Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate
7.5. Size:1235K texas
csd18537nq5a.pdf 

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NQ5ASLPS391B JUNE 2013 REVISED JULY 2014CSD18537NQ5A 60-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10
7.6. Size:1414K texas
csd18532q5b.pdf 

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532Q5BSLPS322B NOVEMBER 2012 REVISED JULY 2014CSD18532Q5B 60-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1
7.7. Size:956K texas
csd18534q5a.pdf 

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18534Q5ASLPS389D OCTOBER 2012 REVISED JUNE 2015CSD18534Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate
7.8. Size:748K texas
csd18534kcs.pdf 

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18534KCSSLPS383B SEPTEMBER 2012 REVISED OCTOBER 2014CSD18534KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Tota
7.9. Size:474K texas
csd18536kcs.pdf 

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18536KCSSLPS532 MARCH 2015CSD18536KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 83 nC Pb-Free T
7.10. Size:1333K texas
csd18532nq5b.pdf 

CSD18532NQ5Bwww.ti.com SLPS440 JUNE 201360-V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD18532NQ5B1FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain to Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10V) 49 nCQgd Gate Charge Gate to Drain 7.9 nC Pb Free Terminal PlatingV
7.11. Size:835K cn vbsemi
csd18534kcs.pdf 

CSD18534KCSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
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History: MEE3710T
| FTK2012
| ME4856-G
| NP88N03KUG
| SVS11N70FJHD2
| IRF6775MTRPBF
| HSM3903