Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18533Q5ASLPS388B SEPTEMBER 2012 REVISED JANUARY 2015CSD18533Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Tota

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18533KCSSLPS362C SEPTEMBER 2012 REVISED JUNE 2015CSD18533KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Ga

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532KCSSLPS361B AUGUST 2012 REVISED JULY 2014CSD18532KCS 60-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NKCSSLPS390A JUNE 2013 REVISED MARCH 2015CSD18537NKCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18535KCSSLPS531 MARCH 2015CSD18535KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 63 nC Pb-Free T

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18531Q5ASLPS321E JUNE 2012 REVISED AUGUST 2015CSD18531Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NQ5ASLPS391B JUNE 2013 REVISED JULY 2014CSD18537NQ5A 60-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532Q5BSLPS322B NOVEMBER 2012 REVISED JULY 2014CSD18532Q5B 60-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18534Q5ASLPS389D OCTOBER 2012 REVISED JUNE 2015CSD18534Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18534KCSSLPS383B SEPTEMBER 2012 REVISED OCTOBER 2014CSD18534KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Tota

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18536KCSSLPS532 MARCH 2015CSD18536KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 83 nC Pb-Free T

CSD18532NQ5Bwww.ti.com SLPS440 JUNE 201360-V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD18532NQ5B1FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain to Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10V) 49 nCQgd Gate Charge Gate to Drain 7.9 nC Pb Free Terminal PlatingV

CSD18534KCSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit