CSD19503KCS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CSD19503KCS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 188 W
Предельно допустимое напряжение сток-исток |Uds|: 80 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.4 V
Максимально допустимый постоянный ток стока |Id|: 94 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 28 nC
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 555 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0092 Ohm
Тип корпуса: TO-220
Аналог (замена) для CSD19503KCS
CSD19503KCS Datasheet (PDF)
csd19503kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19503KCSSLPS479A DECEMBER 2013 REVISED AUGUST 2014CSD19503KCS 80-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total
csd19505kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19505KCSSLPS480B JANUARY 2014 REVISED OCTOBER 2014CSD19505KCS 80 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total
csd19501kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19501KCSSLPS478A JANUARY 2014 REVISED AUGUST 2014CSD19501KCS 80-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total (
csd19505kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19505KCSSLPS480B JANUARY 2014 REVISED OCTOBER 2014CSD19505KCS 80 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total
csd19502q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19502Q5BSLPS413A DECEMBER 2013 REVISED JUNE 2014CSD19502Q5B 80 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total (1
csd19506kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19506KCSSLPS481B DECEMBER 2013 REVISED OCTOBER 2014CSD19506KCS 80 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total
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