CSD23201W10 - параметры транзистора MOSFET, его аналоги, datasheet

CSD23201W10 Datasheet (PDF)

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CSD23201W10www.ti.com SLPS209A AUGUST 2009 REVISED MAY 2010P-Channel NexFET Power MOSFETCheck for Samples: CSD23201W101FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 12 V Small Footprint 1mm 1mmQg Gate Charge Total (4.5V) 1.8 nC Low Profile 0.62mm HeightQgd Gate Charge Gate to Drain 0.26 nC Pb FreeVGS = 1.5V 110

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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23202W10SLPS506 AUGUST 2014CSD23202W10 12-V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Small Footprint 1 mm 1 mmVDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm HeightQg Gate Charge Total (4.

7.2. Size:1038K texas
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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23203WSLPS533 DECEMBER 2014CSD23203W 8 V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 8 V Small FootprintQg Gate Charge Total (4.5 V) 4.9 nC Low Profile 0.62

8.1. Size:1364K texas
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Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD23280F3ZHCSEX4A APRIL 2016 REVISED AUGUST 2017CSD23280F3 12V P FemtoFETMOSFET1 1 TA = 25C Qg QgdVDS 12 V Qg

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