CSD25211W1015 - описание и поиск аналогов

CSD25211W1015 www.ti.com SLPS296 FEBRUARY 2012 P-Channel NexFET Power MOSFET Check for Samples CSD25211W1015 1 FEATURES PRODUCT SUMMARY Ultra Low On Resistance TA = 25 C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain to Source Voltage -20 V Small Footprint 1.0mm x 1.5mm Qg Gate Charge Total (-4.5V) 3.4 nC Qgd Gate Charge Gate to Drain

CSD25213W10 www.ti.com SLPS443 JUNE 2013 P-Channel NexFET Power MOSFET Check for Samples CSD25213W10 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 20 V Small Footprint 1mm 1mm Qg Gate Charge Total (4.5V) 2.2 nC Low Profile 0.62mm Height Qgd Gate Charge Gate to Drain 0.14 nC VGS = 2.5V 54 m Pb Free RDS(on) Drain to S

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD25202W15 SLPS508A JUNE 2014 REVISED JULY 2014 CSD25202W15 20-V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Low-Resistance TA = 25 C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mm VDS Drain-to-Source Voltage 20 V Gate ESD Protection 3 kV Qg Gate C

CSD25201W15 www.ti.com SLPS269A JUNE 2010 REVISED JULY 2011 P-Channel NexFET Power MOSFET Check for Samples CSD25201W15 PRODUCT SUMMARY 1 FEATURES VDS Drain to Drain Voltage 20 V Low Resistance Qg Gate Charge Total ( 4.5V) 4.3 nC Small Footprint 1.5-mm 1.5-mm Qgd Gate Charge Gate to Drain 0.7 nC Gate ESD Protection 3kV VGS = 1.8V 52 m Pb F