CSD25211W1015www.ti.com SLPS296 FEBRUARY 2012P-Channel NexFET Power MOSFETCheck for Samples: CSD25211W10151FEATURESPRODUCT SUMMARY Ultra Low On ResistanceTA = 25C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain to Source Voltage -20 V Small Footprint 1.0mm x 1.5mmQg Gate Charge Total (-4.5V) 3.4 nCQgd Gate Charge Gate to Drain

CSD25213W10www.ti.com SLPS443 JUNE 2013P-Channel NexFET Power MOSFETCheck for Samples: CSD25213W101FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 20 V Small Footprint 1mm 1mmQg Gate Charge Total (4.5V) 2.2 nC Low Profile 0.62mm HeightQgd Gate Charge Gate to Drain 0.14 nCVGS = 2.5V 54 m Pb FreeRDS(on) Drain to S

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25202W15SLPS508A JUNE 2014 REVISED JULY 2014CSD25202W15 20-V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low-ResistanceTA = 25C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mmVDS Drain-to-Source Voltage 20 V Gate ESD Protection 3 kVQg Gate C

CSD25201W15www.ti.com SLPS269A JUNE 2010REVISED JULY 2011P-Channel NexFET Power MOSFETCheck for Samples: CSD25201W15PRODUCT SUMMARY1FEATURESVDS Drain to Drain Voltage 20 V Low ResistanceQg Gate Charge Total (4.5V) 4.3 nC Small Footprint 1.5-mm 1.5-mmQgd Gate Charge Gate to Drain 0.7 nC Gate ESD Protection 3kVVGS = 1.8V 52 m Pb F