CSD25302Q2www.ti.com SLPS234B NOVEMBER 2009REVISED JANUARY 2012P-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY Ultralow Qg and QgdVDS Drain to Source Voltage 20 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 2.6 nC Avalanche RatedQgd Gate Charge Gate to Drain 0.5 nCVGS = 1.8V 71 m Pb Free Terminal PlatingRDS(on) Drain to So

CSD25303W1015www.ti.com SLPS292 JANUARY 2011P-Channel NexFET Power MOSFETCheck for Samples: CSD25303W10151FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdTA = 25C unless otherwise stated TYPICAL VALUE UNIT Small FootprintVDS Drain to Source Voltage 20 V Low Profile 0.62mm HeightQg Gate Charge Total (4.5V) 3.3 nC Pb FreeQgd Gate Charge Gate to Drain

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25304W1015SLPS510A JULY 2014 REVISED AUGUST 2014CSD25304W1015 20-V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Small FootprintVDS Drain-to-Source Voltage 20 V Low Profile 0.62 mm HeightQg Gate Charge

P-Channel CICLON NexFET Power MOSFETs CSD25301W1015 Product Summary Features D DD DD D Ultra Low Qg & Qgd VDS -20 VQg 2.0 nC Small Footprint S SS SS SQgd 0.32 nC Low Profile 0.65mm height VGS= -1.5V 175 m RDS(on) S GS GS G VGS=-2.5V 80 m Pb Free VGS=-4.5V 62 m RoHS Compliant CSP 1.0 x 1.5 mm Wafer Vth -0.75 VTop Vi