CSD25304W1015 - описание и поиск аналогов

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD25304W1015 SLPS510A JULY 2014 REVISED AUGUST 2014 CSD25304W1015 20-V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Small Footprint VDS Drain-to-Source Voltage 20 V Low Profile 0.62 mm Height Qg Gate Charge

CSD25303W1015 www.ti.com SLPS292 JANUARY 2011 P-Channel NexFET Power MOSFET Check for Samples CSD25303W1015 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd TA = 25 C unless otherwise stated TYPICAL VALUE UNIT Small Footprint VDS Drain to Source Voltage 20 V Low Profile 0.62mm Height Qg Gate Charge Total (4.5V) 3.3 nC Pb Free Qgd Gate Charge Gate to Drain

CSD25302Q2 www.ti.com SLPS234B NOVEMBER 2009 REVISED JANUARY 2012 P-Channel NexFET Power MOSFET 1 FEATURES PRODUCT SUMMARY Ultralow Qg and Qgd VDS Drain to Source Voltage 20 V Low Thermal Resistance Qg Gate Charge Total ( 4.5V) 2.6 nC Avalanche Rated Qgd Gate Charge Gate to Drain 0.5 nC VGS = 1.8V 71 m Pb Free Terminal Plating RDS(on) Drain to So

P-Channel CICLON NexFET Power MOSFETs CSD25301W1015 Product Summary Features D D D D D D Ultra Low Qg & Qgd VDS -20 V Qg 2.0 nC Small Footprint S S S S S S Qgd 0.32 nC Low Profile 0.65mm height VGS= -1.5V 175 m RDS(on) S G S G S G VGS=-2.5V 80 m Pb Free VGS=-4.5V 62 m RoHS Compliant CSP 1.0 x 1.5 mm Wafer Vth -0.75 V Top Vi