June 1996 NDT452APP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065 @ VGS = -10Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -4.5V.high cell density, DMOS technology. This very high densityprocess is especially tailored to minimiz

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDT452AP-NLwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Lo