KF7N65FM datasheet, аналоги, основные параметры
Наименование производителя: KF7N65FM 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 44.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 111 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO-220IS
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Аналог (замена) для KF7N65FM
- подборⓘ MOSFET транзистора по параметрам
KF7N65FM даташит
kf7n65fm.pdf
KF7N65FM SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli
kf7n65p-f.pdf
KF7N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli
kf7n60p kf7n60f.pdf
KF7N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supp
kf7n60p-f.pdf
KF7N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supp
Другие IGBT... KF5N25F, KF5N40D, KF5N50FR, KF5N50PR, KF5N50PS, KF5N65I, KF6N70F, KF6N70I, IRF1010E, KF9N40D, KHC21025, KHC2300, KHP45N03LT, KI1302DL, KI1303EDL, KI1304BDL, KI1400DL
Параметры MOSFET. Взаимосвязь и компромиссы
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