KI2309DS - описание и поиск аналогов

SMD Type Transistors P-Channel 60-V (D-S) MOSFET KI2309DS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage VDS -60 V Gate-source voltage VGS 20 V Continuous drain current (TJ = 150 )

SMD Type MOSFET Product specification KI2305 SOT-23-3 Unit mm 2.9+0.2 -0.2 Features 0.4+0.1 -0.05 3 VDS (V) = -20V RDS(ON) 0.065 (VGS = -4.5V) RDS(ON) 0.100 (VGS = -2.5V) 12 RDS(ON) 0.250 (VGS = -1.8V) +0.1 0.95-0.1 0.1+0.05 -0.01 +0.2 1.9-0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Sym

SMD Type IC SMD Type MOSFE SMD Type MOSFET SMD Type MOSFET SMD Type MOSFET SMD Type IC Product specification KI2303 DS SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 VDS (V) = -30V 3 ID = -1.4 A RDS(ON)

SMD Type IC SMD Type IC SMD Type IC SMD Type MOSFET SMD Type MOSFET SMD Type MOSFE SMD Type MOSFET SMD Type MOSFET SMD Type MOSFET SMD Type IC Product specification KI2307DS SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 3 VDS=-30V, rDS(on)=0.080 ,VGS=-10V,ID=-3A VDS=-30V, rDS(on)=0.140 ,VGS=-4.5V,ID=-2.5A 1 2 +0.1 +0.05 0.95-0.1 0.1

SMD Type IC SMD Type MOSFE SMD Type MOSFET SMD Type MOSFET SMD Type MOSFET Product specification KI2301 DS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V RDS(ON) 100m (VGS = -4.5V) 1 2 +0.1 +0.05 RDS(ON) 150m (VGS = -2.5V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 D 1.Base 1.Base 1. Gate 2.Emitter 2.Emitter 2. Source 3.

SMD Type SMD Type IC Product specification KI2302DS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS=20V RDS(on)= 0.085 @VGS=4.5V ,ID=3.6A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(on)= 0.115 @VGS=2.5V ,ID= 3.1A +0.1 1.9-0.1 G 1 3 D 1.Base 1. Gate S 2 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter

SMD Type IC SMD Type Transistors P-Channel 30-V (D-S) MOSFET KI2307BDS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 TrenchFET Power MOSFET RoHS Compliant 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302 (KI2302) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

SMD Type MOSFET IC N-Channel 30-V (D-S) MOSFET SI2306 (KI2306) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.02 +0.1 D 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1. Gate 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-S

SMD Type MOSFET SMD Type P-Channel MOSFET KI2305DS SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V RDS(ON) 0.052 (VGS = -4.5V) 1 2 RDS(ON) 0.071 (VGS = -2.5V) D +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 0.108 (VGS = -1.8V) +0.1 1.9 -0.1 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Paramet

SMD Type Transistors P-Channel 2.5-V (G-S) MOSFET KI2301BDS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features 12 RoH Lead (Pb)-Free Version is RoHS Compliant. +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KI2300(SI2300) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET SI2300 (KI2300) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS=20V 3 ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD Type MOSFET P-Channel MOSFET KI2305 SOT-23-3 Unit mm 2.9+0.2 -0.2 Features 0.4+0.1 -0.05 3 VDS (V) = -20V RDS(ON) 0.065 (VGS = -4.5V) RDS(ON) 0.100 (VGS = -2.5V) 12 RDS(ON) 0.250 (VGS = -1.8V) +0.1 0.95-0.1 0.1+0.05 -0.01 +0.2 1.9-0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol R

SMD Type Transistors P-Channel, 30-V (G-S) MOSFET KI2303BDS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 RoH Lead (Pb)-Free Version is RoHS Compliant. 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-

SMD Type IC SMD Type Transistors N-Channel 30-V (D-S) MOSFET KI2306DS SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 3 TrenchFET Power MOSFET 100% Rg Tested 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source vol

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303 (KI2303) SOT-23-3 Unit mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

SMD Type MOSFET P-Channel Enhancement MOSFET KI2301T SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-12V ID =-2.8 A 1 2 RDS(ON) 115m (VGS =-4.5V) +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 160m (VGS =-2.5V) 1.Gate 2.Source 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 +0.02 RDS(ON) 160m (VGS = 10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 220m (VGS = 4.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramete

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301 (KI2301) Features VDS (V) =-20V RDS(ON) 130m (VGS =-4.5V) 3 RDS(ON) 190m (VGS =-2.5V) 12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20

SMD Type Diodes SMD Type MOSFET SMD Type MOSFET N-Channel MOSFET KI2302DS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS=20V RDS(on)= 0.085 @VGS=4.5V ,ID=3.6A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(on)= 0.115 @VGS=2.5V ,ID= 3.1A +0.1 1.9-0.1 G 1 3 D 1.Base 1. Gate S 2 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings

SMD Type Transistors N-Channel 30-V (D-S) MOSFET KI2304DS SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 3 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 ) *

SMD Type MOSFET N-Channel Enhancement MOSFET SI2304DS (KI2304DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode MOSFET KI2306 SOT-23-3 Unit mm +0.2 2.9-0.2 Features 0.4+0.1 -0.05 3 @VGS=10V RDS(ON)=0.030 RDS(ON)=0.035 @VGS=4.5V DS(ON) GS R =0.052 @V =2.5V 12 0.95+0.1 -0.1 0.1+0.05 -0.01 1.9+0.2 -0.2 D 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector G S Absolute Maximum Ratings