KI5904DC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: KI5904DC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 35 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: CHIPFET
- подбор MOSFET транзистора по параметрам
KI5904DC Datasheet (PDF)
ki5904dc.pdf

SMD Type ICSMD Type ICDual N-Channel 2.5-V (G-S) MOSFETKI5904DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 20VGate-Source Voltage VGS 12Continuous Drain Current (TJ = 150 ) TA =25 4.2 3.1IDTA =85 3.0 2.2APulsed Drain Current IDM 10Continuous Source Current (Diode Conduction)* IS 1.8 0.9Maximum Power Dis
ki5905dc.pdf

SMD Type ICSMD Type ICDual P-Channel 1.8-V (G-S) MOSFETKI5905DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS -8VGate-Source Voltage VGS 8TA =25 4.1 3.0Continuous Drain Current (TJ = 150 ) * IDTA =85 2.9 2.2APulsed Drain Current IDM 10Continuous Source Current * IS -1.8 -0.9TA =25 2.1 1.1Maximum Power D
ki5903dc.pdf

SMD Type ICSMD Type ICDual P-Channel 2.5-V (G-S) MOSFETKI5903DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS -20VGate-Source Voltage VGS 12TA =25 2.9 2.1Continuous Drain Current (TJ = 150 ) * IDTA =85 2.1 1.5APulsed Drain Current IDM 10Continuous Source Current * IS -1.8 -0.9TA =25 2.1 1.1Maximum Power
ki5908dc.pdf

SMD Type ICSMD Type ICDual N-Channel 20-V (D-S) MOSFETKI5908DCFeaturesTrenchFET Power MOSFETSUltra Low rDS(on) and Excellent PowerHandling In Compact FootprintAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 20VGate-Source Voltage VGS 8Continuous Drain Current (TJ = 150 ) TA =25 5.9 4.4IDTA =85 4.2 3.1APulsed Drai
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: CEM8968 | IXFK52N60Q2 | IRF7220GPBF | IXFR64N50Q3 | RFP12N20 | FMV60N190S2HF | WMP07N60C4
History: CEM8968 | IXFK52N60Q2 | IRF7220GPBF | IXFR64N50Q3 | RFP12N20 | FMV60N190S2HF | WMP07N60C4



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