KO3402 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: KO3402
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.4 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.34 nC
Время нарастания (tr): 1 ns
Выходная емкость (Cd): 54.5 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: SOT-23
KO3402 Datasheet (PDF)
ao3402 ko3402.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3402 (KO3402)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4 -0.1VDS (V) = 30V3ID = 4 ARDS(ON) 55m (VGS = 10V)RDS(ON) 70m (VGS = 4.5V)1 2+0.02+0.10.15 -0.02D 0.95 -0.1RDS(ON) 110m (VGS = 2.5V)+0.11.9 -0.21. GateG2. SourceS3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating
ko3402.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3402(AO3402)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesVDS (V) = 30VID =4A12+0.1+0.05RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 70m (VGS =4.5V)RDS(ON) 110m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings T
ko3402 ao3402.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3402(AO3402)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesVDS (V) = 30VID =4A12+0.1+0.05RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 70m (VGS =4.5V)RDS(ON) 110m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings T
ko3403.pdf
SMD Type ICSMD Type TransistorsP-Channel Enhancement Mode Field Effect TransistorKO3403SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesVDS (V) =-30VID =-2.6 A (VGS=-10V)12RDS(ON) 130 m (VGS =-10V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 180 m (VGS =-4.5V)RDS(ON) 260m (VGS =-2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute
ao3407 ko3407.pdf
SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc
ko3407.pdf
SMD Type ICSMD Type TransistorsP-Channel Enhancement Mode Field Effect TransistorKO3407SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3VDS (V) = -30VID =-4.1 A12RDS(ON) 52m (VGS = -10V)+0.1+0.050.95-0.1 0.1-0.01+0.1RDS(ON) 87m (VGS = -4.5V) 1.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symb
ko3401.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET KO3401 SOT-89Unit:mm Features1.70 0.1 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 65m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V)D0.42 0.1 RDS(ON) 120m (VGS =-2.5V) 0.46 0.11.GateG2.DrainS3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source
ko3400 ao3400.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3400(AO3400)SOT-23Unit: mm+0.1Features 2.9-0.1+0.10.4-0.1VDS (V) = 30V3ID =5.8 A(VGS =10V)RDS(ON) 28m (VGS = 10V)12RDS(ON) 33m (VGS =4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 52m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maxim
ao3409 ko3409.pdf
SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)
ao3401 ko3401.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M
ko3400-89.pdf
SMD Type ICSMD Type MOSFETN-Channel MOSFETKO3400SOT-89Unit:mmFeatures1.70 0.1VDS (V) = 30VID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)RDS(ON) 33m (VGS = 4.5V)RDS(ON) 52m (VGS = 2.5V)0.42 0.10.46 0.11.Gate2.Drain3.SourceDGSAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 12 VContinu
ko3409.pdf
SMD Type MOSFETP-Channel Enhancement ModeField Effect TransistorKO3409(AO3409)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3VDS (V) = -30VID =-2.6A(VGS = -10V)12RDS(ON)
ao3404 ko3404.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFET AO3404 (KO3404) 3FeaturesVDS (V) = 30VID =5.8 A (VGS=10V)12RDS(ON) 28 m (VGS =10V) RDS(ON) 43 m (VGS =4.5V) D G SAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V
ko3404.pdf
SMD Type ICSMD Type TransistorsN-Channel Enhancement Mode Field Effect TransistorKO3404SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3VDS (V) = 30VID =5.8 A (VGS=10V)RDS(ON) 28 m (VGS =10V)12+0.1+0.050.95-0.1 0.1-0.01RDS(ON) 43 m (VGS =4.5V)+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Paramet
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