KO3402 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: KO3402
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток (Uds): 30 V
Предельно допустимое напряжение затвор-исток (Ugs): 12 V
Пороговое напряжение включения Ugs(th): 1.4 V
Максимально допустимый постоянный ток стока (Id): 4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.34 nC
Время нарастания (tr): 1 ns
Выходная емкость (Cd): 54.5 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: SOT-23
KO3402 Datasheet (PDF)
1.1. ko3402.pdf 
Size:54K _update_mosfet
SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3402(AO3402) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID =4A 12 +0.1 +0.05 RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 70m (VGS =4.5V) RDS(ON) 110m (VGS =2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings T
5.1. ko3404.pdf Size:55K _update_mosfet
SMD Type IC SMD Type Transistors N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS =10V) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 43 m (VGS =4.5V) +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Paramet
5.2. ko3407.pdf Size:52K _update_mosfet
SMD Type IC SMD Type Transistors P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = -30V ID =-4.1 A 12 RDS(ON) 52m (VGS = -10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 RDS(ON) 87m (VGS = -4.5V) 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symb
5.3. ko3403.pdf Size:56K _update_mosfet
SMD Type IC SMD Type Transistors P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) =-30V ID =-2.6 A (VGS=-10V) 12 RDS(ON) 130 m (VGS =-10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 180 m (VGS =-4.5V) RDS(ON) 260m (VGS =-2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute
5.4. ko3409.pdf Size:54K _update_mosfet
SMD Type MOSFET P-Channel Enhancement Mode Field Effect Transistor KO3409(AO3409) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = -30V ID =-2.6A(VGS = -10V) 12 RDS(ON) < 130m (VGS = -10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) < 200m (VGS = -4.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Param
5.5. ko3400-89.pdf Size:1163K _kexin
SMD Type IC SMD Type MOSFET N-Channel MOSFET KO3400 SOT-89 Unit:mm Features 1.70 0.1 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continu
5.6. ko3401.pdf Size:1515K _kexin
SMD Type MOSFET P-Channel Enhancement MOSFET KO3401 SOT-89 Unit:mm ■ Features 1.70 0.1 ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-10V) ● RDS(ON) ＜ 70mΩ (VGS =-4.5V) D 0.42 0.1 ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) 0.46 0.1 1.Gate G 2.Drain S 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source
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