KO3416 - описание и поиск аналогов

SMDTypee ans istIC DIP Type TrMOSFET SMD Type DIP Ty SMD Typpee DIP Typpee SMD Typ C SMD Type Ior SMDType MOSFET Ty SMD DIP Type IC Product specification KO3416 SOT-23-3 Unit mm +0.2 2.9-0.2 0.4+0.1 Features -0.05 3 VDS (V) = 20V ID = 6.5 A RDS(ON) 22m (VGS = 4.5V) 12 RDS(ON) 26m (VGS = 2.5V) +0.1 0.95-0.1 0.1+0.05 -0.01 +0.2

SMD Type MOSFET N-Channel Enhancement MOSFET AO3416 (KO3416) Features VDS (V) = 20V 3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V) 12 D D RDS(ON) 34m (VGS = 1.8V) G G S S Absolute Maximum Ratings Ta

SMD Type MOSFET Transistors P-Channel MOSFET KO3415A SOT-23 Features Unit mm +0.1 2.9 -0.1 +0.1 VDS (V) =-12V 0.4-0.1 3 ID =-4.1 A (VGS =-4.5V) RDS(ON) 45m (VGS =-4.5V) RDS(ON) 60m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating U

SMD Type MOSFET P-Channel MOSFET AO3415 (KO3415) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V) 1 2 RDS(ON) 55m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V) 1. Gate D 2. Source 3

SMD Type MOSFET P-Channel Enhancement Mode Field Effect Transistor KO3413 SOT-23 Unit mm Features +0.1 2.9-0.1 +0.1 0.4-0.1 VDS (V) = -20V 3 ID = -3 A RDS(ON) 97m (VGS = -4.5V) RDS(ON) 130m (VGS = -2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 D RDS(ON) 190m (VGS = -1.8V) +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source G 3. Dr

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3414(AO3414) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 Features 0.4-0.1 3 VDS (V) = 20V ID =4.2A(VGS=4.5V) RDS(ON) 50m (VGS =4.5V) 12 +0.1 +0.05 RDS(ON) 63m (VGS =2.5V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 87m (VGS =1.8V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximu

SMD Type IC SMD Type MOSFET P-Channel Enhancement Mode Field Effect Transistor KO3419(AO3419) SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 VDS (V) = -20V 3 ID =-3.5A RDS(ON) 75m (VGS = -10V) 12 RDS(ON) 95m (VGS = -4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 145m (VGS = -2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum