KRF7389 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: KRF7389
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 7.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 22 nC
Время нарастания (tr): 8.9 ns
Выходная емкость (Cd): 320 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.029 Ohm
Тип корпуса: SOP-8
KRF7389 Datasheet (PDF)
krf7389.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7389FeaturesGeneration V TechnologyUltra Low On-ResistanceComplimentary Half BridgeSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 30 -30 VContinuous Drain Current Ta =25 ID 7.3 -5.3Continuous Drain Current Ta =70 ID 5.9 -4.2APulsed Drai
krf7307.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7307FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MosfetSurface MountAvailable in Tape & ReelDynamic dv/dt RatingFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel Unit10 Sec. Pulse Drain Current, VGS @4.5V Ta =25 ID 5.7 -4.7Continuous Drain Current VGS @4.5V Ta
krf7319.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7319FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 30 -30 VContinuous Drain Current *5 Ta =25 ID 6.5 -4.9Continuous Drain Current *5 Ta =70 ID 5.2 -3.9APul
krf7313.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKRF7313FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N-Channel MosfetSurface MountFully Avalanche RatedAbsolute M
krf7325.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7325FeaturesTrench TechnologyUltra Low On-ResistanceDual P-Channel MOSFETLow Profile (
krf7350.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7350FeaturesUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountAvailable in Tape and ReelAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 100 -100 VContinuous Drain Current Ta =25 ID 2.1 -1.5Continuous Drain Current Ta =70 ID 1.7 -1.2 APulsed Drain Current *1 IDM
krf7343.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7343FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 55 -55 VContinuous Drain Current,VGS@10V , Ta =25 ID 4.7 -3.4Continuous Drain Current ,VGS@10V , Ta =70 ID 3
krf7317.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7317FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 20 -20 VContinuous Drain Current Ta =25 ID 6.6 -5.3Continuous Drain Current Ta =70 ID 5.3 -4.3APulsed Dr
krf7338.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7338FeaturesUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountAvailable in Tape & ReelAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 12 -12 VContinuous Drain Current,VGS@10V , Ta =25 ID 6.3 -3.0Continuous Drain Current ,VGS@10V , Ta =70 ID 5.2 -2.5 APulsed Drai
krf7379.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7379FeaturesGeneration V TechnologyUltra Low On-ResistanceComplimentary Half BridgeSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 30 -30 VContinuous Drain Current, VGS @ 10V @ Ta =25 ID 5.8 -4.3Continuous Drain Current, VGS @ 10V @ Ta =70 I
krf7309.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7309FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MosfetSurface MountAvailable in Tape & ReelDynamic dv/dt RatingFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel Unit10 Sec. Pulse Drain Current, VGS @ 10V Ta =25 ID 4.7 -3.5Continuous Drain Current VGS @10V Ta
krf7301.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7301FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N-Channel MosfetSurface MountAvailable in Tape & ReelDynamic dv/dt RatingFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit10 Sec. Pulsed Drain Current, VGS @4.5V,Ta =25 ID 5.7Continuous Drain Current, VGS @4.5V,Ta =25 ID 5.2AContin
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