2SK1181 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1181
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 13 A
Максимальная температура канала (Tj): 150 °C
Время включения (ton): 65 ns
Выходная емкость (Cd): 350 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
Тип корпуса: TO3PF FM100
2SK1181 Datasheet (PDF)
2sk1181.pdf
2SK1181External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V V 500 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 13 A I 250 A V = 500V, V = 0VD DSS DS GSI 52 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250A
2sk1189.pdf
2SK1189External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 15 A I 250 A V = 60V, V = 0VD DSS DS GSI V 2.0 4.0 V V = 10V, I = 250AD (pulse) 60 (Tch 150
2sk1188.pdf
2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK1188 60 20 10 40 25 2.1 500 20 250 60 2.0 4.0 10 2502SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.
2sk1187.pdf
2SK1187External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 100 V V 100 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 12 A I 250 A V = 100V, V = 0VD DSS DS GSI V 2.0 4.0 V V = 10V, I = 250AD (pulse) 48 (Tch 15
2sk1179 2sk1183.pdf
2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 2502SK1183 200 20 3 12 25 30 500 20 250 200 2.0
2sk1186.pdf
2SK1186External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 100 V V 100 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 9I 250 A V = 100V, V = 0VD A DSS DS GSI V 2.0 4.0 V V = 10V, I = 250AD (pulse) 36 (Tch 150
2sk1184.pdf
2SK1184External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 200 V V 200 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 5I 250 A V = 200V, V = 0VD A DSS DS GSI 20 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (p
2sk1180.pdf
2SK1180External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V V 500 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 10 A I 250 A V = 500V, V = 0VD DSS DS GSI 40 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD
2sk118.pdf
2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Unit: mm Condenser Microphone Applications High breakdown voltage: VGDS = -50 V High input impedance: I = -1 nA (max) (V = -30 V) GSS GS Low noise: NF = 0.5dB (typ.) (R = 100 k, f = 120 Hz) G Small package Maximum Ratings (Ta == 25
2sk1185.pdf
2SK1185External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 100 V V 100 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 5I 250 A V = 100V, V = 0VD A DSS DS GSI 20 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (
2sk1180.pdf
isc N-Channel MOSFET Transistor 2SK1180DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,Chopper regulator,DC-DC converter and
Другие MOSFET... 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 , 2SK1178 , 2SK1179 , 2SK1180 , AON6414A , 2SK1183 , 2SK1184 , 2SK1185 , 2SK1186 , 2SK1187 , 2SK1188 , 2SK1189 , 2SK1190 .
