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NVMFS5826NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVMFS5826NL
   Маркировка: V5826L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 26 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 9.1 nC
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: SO8FL

 Аналог (замена) для NVMFS5826NL

 

 

NVMFS5826NL Datasheet (PDF)

 ..1. Size:104K  onsemi
nvmfs5826nl.pdf

NVMFS5826NL
NVMFS5826NL

NVMFS5826NLPower MOSFET60 V, 24 mW, 26 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices and RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX24 mW @ 10 V60 VMAXIMUM RATINGS

 7.1. Size:108K  onsemi
nvmfs5832nl.pdf

NVMFS5826NL
NVMFS5826NL

NVMFS5832NLPower MOSFET40 V, 4.2 mW, 120 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAX4.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 7.2. Size:112K  onsemi
ntmfs5834nl nvmfs5834nl.pdf

NVMFS5826NL
NVMFS5826NL

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6

 7.3. Size:71K  onsemi
nvmfs5833n.pdf

NVMFS5826NL
NVMFS5826NL

NVMFS5833NPower MOSFET40 V, 7.5 mW, 86 A, Single N-Channel,SO-8FLFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable NVMFS5833NWF - Wettable Franks Option for Enhanced Optical40 V 7.5 mW @ 10 V 86 AInspection These Devices are Pb-Free and are RoHS CompliantD (5)

 7.4. Size:110K  onsemi
nvmfs5830nl.pdf

NVMFS5826NL
NVMFS5826NL

NVMFS5830NLPower MOSFET40 V, 2.3 mW, 185 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are

 7.5. Size:128K  onsemi
ntmfs5844nl nvmfs5844nl.pdf

NVMFS5826NL
NVMFS5826NL

NTMFS5844NL,NVMFS5844NLMOSFET Power, Single,N-Channel60 V, 61 A, 12 mWFeatureshttp://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5844NLWF - Wettable Flanks Product12 mW @ 10 V60 V 61 A NVMFS Prefix for Automotive and

 7.6. Size:111K  onsemi
nvmfs5885nl.pdf

NVMFS5826NL
NVMFS5826NL

NVMFS5885NLPower MOSFET60 V, 15 mW, 39 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVMFS5885NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Com

 7.7. Size:89K  onsemi
nvmfs5834nl.pdf

NVMFS5826NL
NVMFS5826NL

NVMFS5834NLProduct PreviewPower MOSFET40 V, 9.3 mW, 76 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 7.8. Size:106K  onsemi
ntmfs5844nlt1g nvmfs5844nl.pdf

NVMFS5826NL
NVMFS5826NL

NTMFS5844NL,NVMFS5844NLPower MOSFET60 V, 61 A, 12 mW, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) MAX ID MAXUnique Site and Control Change Requirements;

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