NVMFS5830NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NVMFS5830NL
Маркировка: V5830L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.8 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 29 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 58 nC
Время нарастания (tr): 32 ns
Выходная емкость (Cd): 750 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0023 Ohm
Тип корпуса: DFN5
Аналог (замена) для NVMFS5830NL
NVMFS5830NL Datasheet (PDF)
nvmfs5830nl.pdf
NVMFS5830NLPower MOSFET40 V, 2.3 mW, 185 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are
nvmfs5832nl.pdf
NVMFS5832NLPower MOSFET40 V, 4.2 mW, 120 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAX4.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
ntmfs5834nl nvmfs5834nl.pdf
NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6
nvmfs5833n.pdf
NVMFS5833NPower MOSFET40 V, 7.5 mW, 86 A, Single N-Channel,SO-8FLFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable NVMFS5833NWF - Wettable Franks Option for Enhanced Optical40 V 7.5 mW @ 10 V 86 AInspection These Devices are Pb-Free and are RoHS CompliantD (5)
nvmfs5834nl.pdf
NVMFS5834NLProduct PreviewPower MOSFET40 V, 9.3 mW, 76 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
