NVMFS5C404N - аналоги, параметры транзистора - Справочник транзисторов

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NVMFS5C404N Power MOSFET 40 V, 0.7 mW, 378 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 0.7

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NVMFS5C404NL Power MOSFET 40 V, 0.75 mW, 352 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 0.7

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NVMFS5C406NL MOSFET Power, Single N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C406NLWF - Wettable Flank Option for Enhanced Optical 0.7 mW @ 10 V Inspection 40 V 362 A AEC-Q101 Qua

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MOSFET - Power, Single N-Channel 40 V, 0.8 mW, 353 A NVMFS5C406N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C406NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 0.8 mW @ 10 V 353 A AEC-Q101 Qualifie

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