NVTFS4C08N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NVTFS4C08N
Маркировка: 08WF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 8.4 nC
trⓘ - Время нарастания: 33 ns
Cossⓘ - Выходная емкость: 702 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0059 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NVTFS4C08N
NVTFS4C08N Datasheet (PDF)
nvtfs4c08n.pdf
NVTFS4C08NPower MOSFET30 V, 5.9 mW, 55 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring5.9 mW @ 1
nvtfs4c06n.pdf
NVTFS4C06NPower MOSFET30 V, 4.2 mW, 71 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring4.2 mW @ 1
nvtfs4c05n.pdf
NVTFS4C05NPower MOSFET30 V, 3.6 mW, 102 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring3.6 mW @
nvtfs4c25n.pdf
NVTFS4C25NPower MOSFET30 V, 17 mW, 22 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring
nvtfs4c13n.pdf
NVTFS4C13NPower MOSFET30 V, 9.4 mW, 40 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring9.4 mW @ 1
nvtfs4c10n.pdf
NVTFS4C10NPower MOSFET30 V, 7.4 mW, 47 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring7.4 mW @ 1
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F