Справочник MOSFET. NVTFS4C25N

 

NVTFS4C25N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVTFS4C25N
   Маркировка: 4V25
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.1 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 5.1 nC
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 295 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
   Тип корпуса: WDFN8

 Аналог (замена) для NVTFS4C25N

 

 

NVTFS4C25N Datasheet (PDF)

 ..1. Size:82K  onsemi
 nvtfs4c25n.pdf

NVTFS4C25N NVTFS4C25N

NVTFS4C25NPower MOSFET30 V, 17 mW, 22 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring

 7.1. Size:81K  onsemi
 nvtfs4c06n.pdf

NVTFS4C25N NVTFS4C25N

NVTFS4C06NPower MOSFET30 V, 4.2 mW, 71 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring4.2 mW @ 1

 7.2. Size:80K  onsemi
 nvtfs4c13n.pdf

NVTFS4C25N NVTFS4C25N

NVTFS4C13NPower MOSFET30 V, 9.4 mW, 40 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring9.4 mW @ 1

 7.3. Size:82K  onsemi
 nvtfs4c08n.pdf

NVTFS4C25N NVTFS4C25N

NVTFS4C08NPower MOSFET30 V, 5.9 mW, 55 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring5.9 mW @ 1

 7.4. Size:78K  onsemi
 nvtfs4c10n.pdf

NVTFS4C25N NVTFS4C25N

NVTFS4C10NPower MOSFET30 V, 7.4 mW, 47 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring7.4 mW @ 1

 7.5. Size:75K  onsemi
 nvtfs4c05n.pdf

NVTFS4C25N NVTFS4C25N

NVTFS4C05NPower MOSFET30 V, 3.6 mW, 102 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring3.6 mW @

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