PHP11N50E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PHP11N50E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 156 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 10.4 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm
Тип корпуса: SOT78
PHP11N50E Datasheet (PDF)
php11n50e phb11n50e phw11n50e.pdf
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI
phb11n06lt phd11n06lt php11n06lt 3.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPT
php110nq08t phb110nq08t.pdf
PHP/PHB110NQ08TN-channel TrenchMOS standard level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D
phb119nq06t php119nq06t.pdf
PHP/PHB119NQ06TN-channel TrenchMOS standard level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
php119nq06t phb119nq06t.pdf
PHP/PHB119NQ06TN-channel TrenchMOS standard level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
php110nq06lt.pdf
PHP110NQ06LTN-channel TrenchMOS logic level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features
phb110nq08lt php110nq08lt.pdf
PHP/PHB110NQ08LTN-channel TrenchMOS logic level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies
php110nq06lt phb110nq06lt.pdf
PHP/PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 01 04 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-D
php110nq08t.pdf
PHP110NQ08TN-channel TrenchMOS standard level FETRev. 02 12 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F
phb112n06t php112n06t.pdf
PHP112N06T; PHB112N06TN-channel enhancement mode field-effect transistorRev. 01 07 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP112N06T in SOT78 (TO-220AB)PHB112N06T in SOT404 (D2-PAK).2. Features Fast switching Very low on-state resistan
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History: PHP10N60E