PH9030AL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PH9030AL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 46 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 61 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 28 ns
Cossⓘ - Выходная емкость: 227 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: LFPAK
- подбор MOSFET транзистора по параметрам
PH9030AL Datasheet (PDF)
ph9030al.pdf
PH9030ALN-channel TrenchMOS logic level FETRev. 07 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph9030al.pdf
PH9030ALN-channel TrenchMOS logic level FETRev. 07 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph9030l.pdf
PH9030LN-channel TrenchMOS logic level FETRev. 01 29 July 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b
ph9030l.pdf
PH9030LN-channel TrenchMOS logic level FETRev. 01 29 July 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRF241 | NCE70T180D
History: IRF241 | NCE70T180D
Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c | d331 transistor | irfbc40 | mp16b transistor