PHP18N20E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PHP18N20E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.18 Ohm
Тип корпуса: SOT78
PHP18N20E Datasheet (PDF)
php18n20e 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP18N20E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 18 Ablocking voltage, fast switching and Ptot Total power dis
phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 AgRDS(ON) 90 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
php18nq11t.pdf
PHP18NQ11TN-channel TrenchMOS standard level FETRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
phb18nq20t php18nq20t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ20T, PHB18NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te
php18nq10t.pdf
PHP18NQ10TN-channel TrenchMOS standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F
php18nq11t.pdf
PHP18NQ11TN-channel TrenchMOS standard level FETRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
php18nq11t.pdf
isc N-Channel MOSFET Transistor PHP18NQ11TDESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 110V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE
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