Справочник MOSFET. QM0008G

 

QM0008G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: QM0008G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21.6 ns
   Cossⓘ - Выходная емкость: 29 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.31 Ohm
   Тип корпуса: SOT-223

 Аналог (замена) для QM0008G

 

 

QM0008G Datasheet (PDF)

 ..1. Size:325K  ubiq
 qm0008g.pdf

QM0008G QM0008G

QM0008G N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2Afor most of the small power switching and load switch applications. Applications The QM0008G meet the RoHS and Green Product re

 8.1. Size:343K  ubiq
 qm0008d.pdf

QM0008G QM0008G

QM0008D N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4Afor most of the synchronous buck converter applications . Applications The QM0008D meet the RoHS and Green Product requirement w

 8.2. Size:334K  ubiq
 qm0008j.pdf

QM0008G QM0008G

QM0008J N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2Afor most of the small power switching and load switch applications. Applications The QM0008J meet the RoHS and Green Product re

 8.3. Size:341K  ubiq
 qm0008u.pdf

QM0008G QM0008G

QM0008U N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4Afor most of the synchronous buck converter applications . Applications The QM0008U meet the RoHS and Green Product requirement w

 8.4. Size:303K  ubiq
 qm0008k.pdf

QM0008G QM0008G

QM0008K N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 1.2Afor most of the small power switching and load switch applications. Applications The QM0008K meet the RoHS and Green Product re

 8.5. Size:899K  cn vbsemi
 qm0008k.pdf

QM0008G QM0008G

QM0008Kwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlighting

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