2SK1185 - Даташиты. Аналоги. Основные параметры

2SK1185 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 5I 250 A V = 100V, V = 0V D A DSS DS GS I 20 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK1188 60 20 10 40 25 2.1 500 20 250 60 2.0 4.0 10 250 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.

2SK1187 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 12 A I 250 A V = 100V, V = 0V D DSS DS GS I V 2.0 4.0 V V = 10V, I = 250 A D (pulse) 48 (Tch 15

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 250 2SK1183 200 20 3 12 25 30 500 20 250 200 2.0

2SK1186 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 9I 250 A V = 100V, V = 0V D A DSS DS GS I V 2.0 4.0 V V = 10V, I = 250 A D (pulse) 36 (Tch 150

2SK1184 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 200 V V 200 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 5I 250 A V = 200V, V = 0V D A DSS DS GS I 20 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (p

2SK1180 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V V 500 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 10 A I 250 A V = 500V, V = 0V D DSS DS GS I 40 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D

2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Unit mm Condenser Microphone Applications High breakdown voltage VGDS = -50 V High input impedance I = -1 nA (max) (V = -30 V) GSS GS Low noise NF = 0.5dB (typ.) (R = 100 k , f = 120 Hz) G Small package Maximum Ratings (Ta = = 25

2SK1181 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V V 500 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 13 A I 250 A V = 500V, V = 0V D DSS DS GS I 52 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A

isc N-Channel MOSFET Transistor 2SK1180 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, Chopper regulator,DC-DC converter and