QM2409J. Аналоги и основные параметры

Наименование производителя: QM2409J

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9.6 ns

Cossⓘ - Выходная емкость: 90.8 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm

Тип корпуса: SOT-89

Аналог (замена) для QM2409J

- подборⓘ MOSFET транзистора по параметрам

 

QM2409J даташит

 ..1. Size:357K  ubiq
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QM2409J

QM2409J P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7A for most of the small power switching and load switch applications. Applications The QM2409J meet the RoHS and Green Product req

 8.1. Size:346K  ubiq
qm2409g.pdfpdf_icon

QM2409J

QM2409G P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7A for most of the small power switching and load switch applications. Applications The QM2409G meet the RoHS and Green Product req

 8.2. Size:324K  ubiq
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QM2409J

QM2409K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.1A for most of the small power switching and load switch applications. Applications The QM2409K meet the RoHS and Green Product req

 8.3. Size:365K  ubiq
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QM2409J

QM2409V P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.3A for most of the small power switching and load switch applications. Applications The QM2409V meet the RoHS and Green Product req

Другие IGBT... QM2403V, QM2404C1, QM2404D, QM2404J, QM2404K, QM2404V, QM2407K, QM2409G, 4435, QM2409K, QM2409V, QM2410D, QM2410G, QM2410J, QM2410K, QM2410S, QM2410V