QM2417Y1. Аналоги и основные параметры
Наименование производителя: QM2417Y1
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 0.33 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 33 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: SOT-323
Аналог (замена) для QM2417Y1
- подборⓘ MOSFET транзистора по параметрам
QM2417Y1 даташит
..1. Size:344K ubiq
qm2417y1.pdf 

QM2417Y1 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2417Y1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1A for most of the small power switching and load switch applications. Applications The QM2417Y1 meet the RoHS and Green Product re
8.1. Size:349K ubiq
qm2417c1.pdf 

QM2417C1 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2417C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1A for most of the small power switching and load switch applications. Applications The QM2417C1 meet the RoHS and Green Product re
9.1. Size:357K ubiq
qm2416c1.pdf 

QM2416C1 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2416C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8A for most of the small power switching and load switch applications. Applications The QM2416C1 meet the RoHS and Green Product req
9.2. Size:348K ubiq
qm2416y1.pdf 

QM2416Y1 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2416Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8A for most of the small power switching and load switch applications. Applications The QM2416Y1 meet the RoHS and Green Product req
9.3. Size:247K ubiq
qm2416j.pdf 

QM2416J N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2416J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 4.3A for most of the small power switching and load switch applications. Applications The QM2416J meet the RoHS and Green Product requir
9.4. Size:323K ubiq
qm2415sn8.pdf 

QM2415SN8 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2415SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 130m -2.5A charge for most of the small power switching and load switch applications. Applications The QM2415SN8 meet the RoHS and Green Produ
9.5. Size:335K ubiq
qm2418c1.pdf 

QM2418C1 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2418C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52A for most of the small power switching and load switch applications. Applications The QM2418C1 meet the RoHS and Green Product re
9.6. Size:355K ubiq
qm2414v.pdf 

QM2414V N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2414V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 50m 3.8A for most of the small power switching and load switch applications. Applications The QM2414V meet the RoHS and Green Product requir
9.7. Size:340K ubiq
qm2410j.pdf 

QM2410J N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1A for most of the small power switching and load switch applications. Applications The QM2410J meet the RoHS and Green Product requi
9.8. Size:312K ubiq
qm2413k.pdf 

QM2413K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2413K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 155m -2.2A for most of the small power switching and load switch applications. Applications The QM2413K meet the RoHS and Green Product req
9.9. Size:303K ubiq
qm2410k.pdf 

QM2410K N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.2A for most of the small power switching and load switch applications. Applications The QM2410K meet the RoHS and Green Product requir
9.10. Size:337K ubiq
qm2410d.pdf 

QM2410D N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 22A for most of the small power switching and load switch applications. Applications The QM2410D meet the RoHS and Green Product require
9.11. Size:349K ubiq
qm2411j.pdf 

QM2411J P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6A for most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req
9.12. Size:353K ubiq
qm2413v.pdf 

QM2413V P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2413V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 155m -2.3A for most of the small power switching and load switch applications. Applications The QM2413V meet the RoHS and Green Product req
9.13. Size:311K ubiq
qm2411k.pdf 

QM2411K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3A for most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir
9.14. Size:338K ubiq
qm2411g.pdf 

QM2411G P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6A for most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req
9.15. Size:327K ubiq
qm2415sm8.pdf 

QM2415SM8 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2415SM8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 130m -3.3A charge for most of the small power switching and load switch applications. Applications The QM2415SM8 meet the RoHS and Green Produ
9.16. Size:324K ubiq
qm2411sn8.pdf 

QM2411SN8 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 80m -3.2A charge for most of the small power switching and load switch applications. Applications The QM2411SN8 meet the RoHS and Green Produc
9.17. Size:309K ubiq
qm2419k.pdf 

QM2419K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2419K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 205m -2.3A for most of the small power switching and load switch applications. Applications The QM2419K meet the RoHS and Green Product req
9.18. Size:329K ubiq
qm2418y1.pdf 

QM2418Y1 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2418Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52A for most of the small power switching and load switch applications. Applications The QM2418Y1 meet the RoHS and Green Product re
9.19. Size:314K ubiq
qm2416k.pdf 

QM2416K N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2416K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 3.5A for most of the small power switching and load switch applications. Applications The QM2416K meet the RoHS and Green Product requir
9.20. Size:336K ubiq
qm2410s.pdf 

QM2410S N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 6.2A for most of the small power switching and load switch applications. Applications The QM2410S meet the RoHS and Green Product requi
9.21. Size:312K ubiq
qm2415k.pdf 

QM2415K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2415K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 125m -2.4A for most of the small power switching and load switch applications. Applications The QM2415K meet the RoHS and Green Product req
9.22. Size:330K ubiq
qm2410g.pdf 

QM2410G N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1A for most of the small power switching and load switch applications. Applications The QM2410G meet the RoHS and Green Product requi
9.23. Size:315K ubiq
qm2414k.pdf 

QM2414K N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2414K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 50m 3.6A for most of the small power switching and load switch applications. Applications The QM2414K meet the RoHS and Green Product requi
9.24. Size:344K ubiq
qm2410v.pdf 

QM2410V N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.5A for most of the small power switching and load switch applications. Applications The QM2410V meet the RoHS and Green Product requir
9.25. Size:352K ubiq
qm2411v.pdf 

QM2411V P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2A for most of the small power switching and load switch applications. Applications The QM2411V meet the RoHS and Green Product requ
9.26. Size:877K cn vbsemi
qm2416k.pdf 

QM2416K www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conver
Другие IGBT... QM2415K, QM2415SM8, QM2415SN8, QM2416C1, QM2416J, QM2416K, QM2416Y1, QM2417C1, RFP50N06, QM2418C1, QM2418Y1, QM2419K, QM2420K, QM2421K, QM2421M3, QM2423K, QM2423V