QM2606C1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: QM2606C1
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 0.33 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.52 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 26.6 ns
Cossⓘ - Выходная емкость: 30 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: SOT-363
QM2606C1 Datasheet (PDF)
qm2606c1.pdf
QM2606C1 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2606C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 90m 1.52Acharge for most of the small power switching and -20V 240m -1Aload switch applications. The QM2606C1 meet the RoHS and G
qm2605s.pdf
QM2605S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 42m 4.6Acharge for most of the small power switching and -20V 130m -2.8Aload switch applications. The QM2605S meet the RoHS and Gr
qm2605v.pdf
QM2605V N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8Acharge for most of the small power switching and -20V 130m -2.5Aload switch applications. The QM2605V meet the RoHS and Gr
qm2601s.pdf
QM2601S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 18m 7.2Acharge for most of the small power switching and -20V 50m -4.5Aload switch applications. The QM2601S meet the RoHS and Gree
qm2602s.pdf
QM2602S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2602S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 16m 7.7 Acharge for most of the small power switching and -20V 50m -4.6 A load switch applications. The QM2602S meet the RoHS and G
qm2604v.pdf
QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 50m 3.8Acharge for most of the small power switching and -20V 155 m -2.3Aload switch applications. The QM2604V meet the RoHS an
qm2607c1.pdf
QM2607C1 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2607C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 115m 1.3 Acharge for most of the small power switching and -20V 255m -0.94 Aload switch applications. The QM2607C1 meet the RoHS
qm2608n8.pdf
QM2608N8 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8Acharge for most of the small power switching and -20V 70m -3.4Aload switch applications. The QM2608N8 meet the RoHS and G
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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