QM2607C1 - описание и поиск аналогов

QM2607C1 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2607C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 115m 1.3 A charge for most of the small power switching and -20V 255m -0.94 A load switch applications. The QM2607C1 meet the RoHS

QM2605S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 42m 4.6A charge for most of the small power switching and -20V 130m -2.8A load switch applications. The QM2605S meet the RoHS and Gr

QM2605V N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8A charge for most of the small power switching and -20V 130m -2.5A load switch applications. The QM2605V meet the RoHS and Gr

QM2601S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 18m 7.2A charge for most of the small power switching and -20V 50m -4.5A load switch applications. The QM2601S meet the RoHS and Gree

QM2602S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2602S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 16m 7.7 A charge for most of the small power switching and -20V 50m -4.6 A load switch applications. The QM2602S meet the RoHS and G

QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 50m 3.8A charge for most of the small power switching and -20V 155 m -2.3A load switch applications. The QM2604V meet the RoHS an

QM2606C1 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2606C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 90m 1.52A charge for most of the small power switching and -20V 240m -1A load switch applications. The QM2606C1 meet the RoHS and G

QM2608N8 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8A charge for most of the small power switching and -20V 70m -3.4A load switch applications. The QM2608N8 meet the RoHS and G