QM3004B datasheet, подбор замены

 ..1. Size:334K  ubiq
 qm3004b.pdf 

QM3004B N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3004B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 8.5m 65A for most of the synchronous buck converter applications . Applications The QM3004B meet the RoHS and Green Product requirement , 10

 8.1. Size:337K  ubiq
 qm3004m6.pdf 

QM3004M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3004M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 8.5m 30V 58A gate charge for most of the synchronous buck converter applications . Applications The QM3004M6 meet the RoHS and Green Product requirement

 8.2. Size:304K  ubiq
 qm3004u.pdf 

QM3004U N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3004U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 8.5m 55A for most of the synchronous buck converter applications . Applications The QM3004U meet the RoHS and Green Product requirement , 10

 8.3. Size:307K  ubiq
 qm3004m3.pdf 

QM3004M3 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3004M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 9m 30V 46A for most of the synchronous buck converter applications . Applications The QM3004M3 meet the RoHS and Green Product requirem

 8.4. Size:303K  ubiq
 qm3004n3.pdf 

QM3004N3 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3004N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 9m 30V 46A for most of the synchronous buck converter applications . Applications The QM3004N3 meet the RoHS and Green Product requirement

 8.5. Size:308K  ubiq
 qm3004u1.pdf 

QM3004U1 N-Ch 30V Fast Switching MOSFETs General Description Product Summery Halogen-Free The QM3004U1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 8.5m 55A for most of the synchronous buck converter applications . Applications The QM3004U1 meet the RoHS and Halogen-free P

 8.6. Size:306K  ubiq
 qm3004d.pdf 

QM3004D N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 8.5m 55A for most of the synchronous buck converter applications . Applications The QM3004D meet the RoHS and Green Product requirement , 10

 8.7. Size:267K  ubiq
 qm3004sm3.pdf 

QM3004SM3 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3004SM3 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 10m 30V 43A gate charge for most of the synchronous buck converter applications . Applications The QM3004SM3 meet the RoHS and Green Product requireme

 8.8. Size:340K  ubiq
 qm3004s.pdf 

QM3004S N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3004S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 9m 30V 10.3A for most of the synchronous buck converter applications . Applications The QM3004S meet the RoHS and Green Product requirement ,

 8.9. Size:897K  cn vbsemi
 qm3004d.pdf 

QM3004D www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOLUT