QM3006U MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: QM3006U
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 53 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 78 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 21.6 ns
Выходная емкость (Cd): 237 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0055 Ohm
Тип корпуса: TO-251
QM3006U Datasheet (PDF)
qm3006u.pdf
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QM3006U N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3006U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 5.5m 78Afor most of the synchronous buck converter applications . Applications The QM3006U meet the RoHS and Green Product requirement , 10
qm3006u1.pdf
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QM3006U1 N-Ch 30V Fast Switching MOSFETsGeneral Description Product Summery Halogen-FreeThe QM3006U1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 5.5m 80Afor most of the synchronous buck converter applications . Applications The QM3006U1 meet the RoHS and Halogen-free
qm3006s.pdf
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QM3006S N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3006S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 6m 30V 13A for most of the synchronous buck converter applications . Applications The QM3006S meet the RoHS and Green Product requirement , 10
qm3006b.pdf
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QM3006B N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3006B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 6m 90Afor most of the synchronous buck converter applications . Applications The QM3006B meet the RoHS and Green Product requirement , 100%
qm3006m3.pdf
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QM3006M3 N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3006M3 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 30V 7m 60Agate charge for most of the synchronous buck converter applications . Applications The QM3006M3 meet the RoHS and Green Product requirement , 1
qm3006m6.pdf
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QM3006M6 N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3006M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 30V 5.5m 81Agate charge for most of the synchronous buck converter applications . Applications The QM3006M6 meet the RoHS and Green Product requirement ,
qm3006p.pdf
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QM3006P N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3006P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 6m 90Afor most of the synchronous buck converter applications . Applications The QM3006P meet the RoHS and Green Product requirement , 100%
qm3006d.pdf
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QM3006D N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3006D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 5.5m 80Afor most of the synchronous buck converter applications . Applications The QM3006D meet the RoHS and Green Product requirement , 1
qm3006n3.pdf
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QM3006N3 N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3006N3 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 30V 7m 60Agate charge for most of the synchronous buck converter applications . Applications The QM3006N3 meet the RoHS and Green Product requirement , 1
qm3006s.pdf
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QM3006Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
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