Справочник MOSFET. QM6007D

 

QM6007D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: QM6007D
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 20.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.4 ns
   Cossⓘ - Выходная емкость: 59 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для QM6007D

   - подбор ⓘ MOSFET транзистора по параметрам

 

QM6007D Datasheet (PDF)

 ..1. Size:349K  ubiq
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QM6007D

QM6007D P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6007D is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 170m -8Afor most of the synchronous buck converter applications . Applications The QM6007D meet the RoHS and Green Product requirement,10

 8.1. Size:349K  ubiq
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QM6007D

QM6007S P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6007S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 170m -2.5Afor most of the synchronous buck converter applications . Applications The QM6007S meet the RoHS and Green Product requirement,

 8.2. Size:307K  ubiq
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QM6007D

QM6007K P-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6007K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -60V 175m -2.2Afor most of the small power switching and load switch applications. Applications The QM6007K meet the RoHS and Green Product Hi

 9.1. Size:342K  ubiq
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QM6007D

QM6008D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 10Afor most of the synchronous buck converter applications . Applications The QM6008D meet the RoHS and Green Product requirement , 10

Другие MOSFET... QM6004P , QM6004S , QM6006B , QM6006D , QM6006F , QM6006M6 , QM6006P , QM6006S , TK10A60D , QM6007K , QM6007S , QM6008D , QM6008G , QM6008K , QM6008P , QM6008S , QM6008U .

History: AM4922N | IXTH22N50P

 

 
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