Справочник MOSFET. QM6008S

 

QM6008S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: QM6008S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7.2 ns
   Cossⓘ - Выходная емкость: 38 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SOP-8
     - подбор MOSFET транзистора по параметрам

 

QM6008S Datasheet (PDF)

 ..1. Size:344K  ubiq
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QM6008S

QM6008S N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3Afor most of the synchronous buck converter applications . Applications The QM6008S meet the RoHS and Green Product requirement , 100

 8.1. Size:342K  ubiq
qm6008d.pdfpdf_icon

QM6008S

QM6008D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 10Afor most of the synchronous buck converter applications . Applications The QM6008D meet the RoHS and Green Product requirement , 10

 8.2. Size:343K  ubiq
qm6008u.pdfpdf_icon

QM6008S

QM6008U N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 10Afor most of the synchronous buck converter applications . Applications The QM6008U meet the RoHS and Green Product requirement , 10

 8.3. Size:331K  ubiq
qm6008g.pdfpdf_icon

QM6008S

QM6008G N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6008G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.8Afor most of the small power switching and load switch applications. Applications The QM6008G meet the RoHS and Green Product requ

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History: SQJ474EP | STP80NE03L-06

 

 
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