RJK0602DPN-E0 - описание и поиск аналогов

 ..1. Size:74K  renesas
 rjk0602dpn-e0.pdf 

Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0200 N-Channel MOS FET Rev.2.00 60 V, 100 A, 3.9 m Aug 24, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code PRSS0004AG-A (Package name TO-220AB) 4 2, 4 D 1. Gate 2. Drain 1 G 3. Source 4.

 8.1. Size:74K  renesas
 rjk0603dpn-e0.pdf 

Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0200 N-Channel MOS FET Rev.2.00 60 V, 80 A, 5.2 m Aug 24, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code PRSS0004AG-A (Package name TO-220AB) 4 2, 4 D 1. Gate 2. Drain 1 G 3. Source 4. D

 8.2. Size:74K  renesas
 rjk0601dpn-e0.pdf 

Preliminary Datasheet RJK0601DPN-E0 R07DS0652EJ0200 N-Channel MOS FET Rev.2.00 60 V, 110 A, 3.1 m Aug 24, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code PRSS0004AG-A (Package name TO-220AB) 4 2, 4 D 1. Gate 2. Drain 1 G 3. Source 4.

 9.1. Size:90K  renesas
 rjk0631jpd.pdf 

Preliminary Datasheet RJK0631JPD R07DS0252EJ0300 Silicon N Channel Power MOS FET Rev.3.00 High Speed Power Switching Jul 24, 2013 Features For Automotive application Low on-resistance RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 1350 pF typ AEC-Q101 compliant Outline RENESAS Package code PRSS0004ZD-C (Package n

 9.2. Size:116K  renesas
 r07ds0343ej rjk0657dpa.pdf 

Preliminary Datasheet RJK0657DPA R07DS0343EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 14 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8

 9.3. Size:81K  renesas
 r07ds0077ej rjk0652dpb.pdf 

Preliminary Datasheet RJK0652DPB R07DS0077EJ0102 (Previous REJ03G1766-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 9.4. Size:90K  renesas
 rjk0631jpr.pdf 

Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 60 V - 30 A - N Channel Power MOS FET Rev.3.00 Jul 24, 2013 High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 1350 pF typ Outline RENESAS Package code PRSS0003AD-A (Pac

 9.5. Size:135K  renesas
 r07ds0344ej rjk0658dpa.pdf 

Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8

 9.6. Size:159K  renesas
 rej03g1880 rjk0654dpbds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:125K  renesas
 rej03g1873 rjk0629dpnds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:153K  renesas
 rjk0631jpe.pdf 

RJK0631JPE R07DS0341JJ0500 N MOS FET Rev.5.00 2013.07.24 AEC-Q101 RDS(on) = 12 m typ. (4.5 V ) Ciss = 1350 pF typ PRSS0004AE-B ( LDPAK (S)-(

 9.9. Size:116K  renesas
 rjk0632jpd.pdf 

Preliminary Datasheet RJK0632JPD R07DS0342EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 11, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 29 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 440 pF typ. Outline RENESAS Package code PRSS0004ZD-C (Package name

 9.10. Size:135K  renesas
 r07ds0346ej rjk0660dpa.pdf 

Preliminary Datasheet RJK0660DPA R07DS0346EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 4.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8

 9.11. Size:179K  renesas
 rej03g1882 rjk0656dpbds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.12. Size:180K  renesas
 rej03g1881 rjk0655dpbds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.13. Size:85K  renesas
 rjk0636jpd.pdf 

Preliminary Datasheet RJK0636JPD R07DS0365EJ0200 60 V - 25 A - N Channel Power MOS FET Rev.2.00 High Speed Power Switching Aug 29, 2012 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 750 pF typ Outline RENESAS Package code PRSS0004ZD-C (Pa

 9.14. Size:92K  renesas
 rjk0629jpe.pdf 

Preliminary Datasheet RJK0629JPE R07DS1075EJ0100 60 V - 85 A - Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 17, 2013 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 3.75 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 4100 pF typ Outline RENESAS Package code PRSS0004AE-B

 9.15. Size:125K  renesas
 rej03g1875 rjk0629dpkds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.16. Size:81K  renesas
 r07ds0076ej rjk0651dpb.pdf 

Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 (Previous REJ03G1765-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 11 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

 9.17. Size:82K  renesas
 r07ds0078ej rjk0653dpb.pdf 

Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 (Previous REJ03G1760-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 3.8 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 9.18. Size:92K  renesas
 rjk0628jpe.pdf 

Preliminary Datasheet RJK0628JPE R07DS0336EJ0200 60 V - 160 A - N Channel MOS FET Rev.2.00 High Speed Power Switching Aug 29, 2012 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 2.6 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 5400 pF typ Outline RENESAS Package code PRSS0004AE-B (Packa

 9.19. Size:112K  renesas
 rjk0630jpe.pdf 

Preliminary Datasheet RJK0630JPE R07DS0340EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 6.2 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 2100 pF typ. Outline RENESAS Package code PRSS0004AE-B (Package name

 9.20. Size:134K  renesas
 r07ds0345ej rjk0659dpa.pdf 

Preliminary Datasheet RJK0659DPA R07DS0345EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8

 9.21. Size:126K  renesas
 rej03g1874 rjk0629dpeds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.22. Size:806K  cn vbsemi
 rjk0632jpd.pdf 

RJK0632JPD www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise