Справочник MOSFET. RJK1525DPJ

 

RJK1525DPJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK1525DPJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 18 nC
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: LDPAK

 Аналог (замена) для RJK1525DPJ

 

 

RJK1525DPJ Datasheet (PDF)

 ..1. Size:96K  renesas
rjk1525dpj.pdf

RJK1525DPJ
RJK1525DPJ

Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B RENESAS Package code: PRSS0004AE-C(Package name LDPAK(L)) (Package

 ..2. Size:98K  renesas
rej03g0623 rjk1525dpj.pdf

RJK1525DPJ
RJK1525DPJ

Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B RENESAS Package code: PRSS0004AE-C(Package name LDPAK(L)) (Package

 5.1. Size:83K  renesas
rjk1525dpp-m0.pdf

RJK1525DPJ
RJK1525DPJ

Preliminary Datasheet RJK1525DPP-M0 R07DS0966EJ0100150V - 17A - MOS FET Rev.1.00High Speed Power Switching Nov 20, 2012Features Low on-resistance RDS(on) = 0.089 typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source

 8.1. Size:133K  renesas
rej03g1859 rjk1526dpjds.pdf

RJK1525DPJ
RJK1525DPJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:86K  renesas
rej03g0510 rjk1529dpk.pdf

RJK1525DPJ
RJK1525DPJ

Preliminary Datasheet RJK1529DPK REJ03G0510-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P) D1. Gate2. Drain (Flange)G3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item

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