Preliminary Datasheet RJK2076DPA R07DS0859EJ0200200V - 20A - MOS FET Rev.2.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.068 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C) Low leakage current High speed switching Outline REN

Preliminary Datasheet RJK2075DPA R07DS0856EJ0200200V - 20A - MOS FET Rev.2.00High Speed Power Switching Jan 10, 2013Features Low on-resistance RDS(on) = 0.054 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PWSN0008DE-A(Package name: WPAK(3F))5 6 7 8D D D D86 754 1, 2, 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK2009DPM REJ03G0474-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. Gate2. DrainG3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item Symbol

Preliminary Datasheet RJK2017DPP R07DS0416EJ0300(Previous: REJ03G1797-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 07, 2011Features Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A(Package name: TO-220FN)D1.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK2062JPK R07DS0488EJ0100200 V - 80 A - N Channel Power MOS FET Rev.1.00High Speed Power Switching Sep 19, 2012Features For Automotive applications AEC-Q101 compliant Low on-resistance : RDS(on) = 17 m typ. Low input capacitance : Ciss = 6800 pF typ Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P) 2, 44D

Preliminary Datasheet RJK2061JPE R07DS0369EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 12, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 55 m typ. Low input capacitance : Ciss = 1850 pF typ Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )2, 4D41. Gate

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Isc N-Channel MOSFET Transistor RJK2006DPEFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol