RJK4502DPD. Аналоги и основные параметры

Наименование производителя: RJK4502DPD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 450 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 22 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.85 Ohm

Тип корпуса: MP-3A

Аналог (замена) для RJK4502DPD

- подборⓘ MOSFET транзистора по параметрам

 

RJK4502DPD даташит

 ..1. Size:80K  renesas
rjk4502dpd.pdfpdf_icon

RJK4502DPD

Preliminary Datasheet RJK4502DPD R07DS0865EJ0100 450V - 2.8A - MOS FET Rev.1.00 High Speed Power Switching Aug 08, 2012 Features Low on-state resistance RDS(on) = 3 typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Ab

 6.1. Size:50K  renesas
rjk4502dje.pdfpdf_icon

RJK4502DPD

Preliminary Datasheet RJK4502DJE R07DS0843EJ0200 450V - 2.8A - MOS FET Rev.2.00 High Speed Power Switching Aug 10, 2012 Features Low on-state resistance RDS(on) = 3 typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1 Absolute Maxim

 9.1. Size:88K  renesas
rej03g1540 rjk4512dpeds.pdfpdf_icon

RJK4502DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:94K  renesas
rjk4512dpp-e0.pdfpdf_icon

RJK4502DPD

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100 450V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1

Другие IGBT... RJK2061JPE, RJK2062JPK, RJK2075DPA, RJK2076DPA, RJK4002DJE, RJK4002DPD, RJK4034DJE, RJK4502DJE, IRF3710, RJK4512DPP-E0, RJK4532DPD, RJK4532DPH-E0, RJK5002DJE, RJK5002DPD, RJK5013DPP-E0, RJK5014DPP, RJK5014DPP-E0