PMBFJ109 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PMBFJ109
Тип транзистора: JFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.25 W
Предельно допустимое напряжение сток-исток |Uds|: 25 V
Максимально допустимый постоянный ток стока |Id|: 0.04 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 15 pf
Сопротивление сток-исток открытого транзистора (Rds): 12 Ohm
Тип корпуса: SOT23
PMBFJ109 Datasheet (PDF)
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt
pmbfj108 pmbfj109 pmbfj110.pdf
PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
pmbfj111 pmbfj112 pmbfj113.pdf
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int
pmbfj174 pmbf175 pmbf176 pmbf177.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
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History: MMBF5458
