Справочник MOSFET. RSS090N03FU6TB

 

RSS090N03FU6TB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RSS090N03FU6TB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 225 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для RSS090N03FU6TB

 

 

RSS090N03FU6TB Datasheet (PDF)

 ..1. Size:57K  rohm
 rss090n03fu6tb.pdf

RSS090N03FU6TB RSS090N03FU6TB

RSS090N03 Transistors Switching (30V, 9A) RSS090N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP85.00.22) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.20.1 Application Power switching, DC/DC converter. 0.40.11.270.1Each lead has same dimensions Structure Silicon N-channel MOS FET Equivalent c

 8.1. Size:81K  rohm
 rss090p03fu6tb rss090p03tb.pdf

RSS090N03FU6TB RSS090N03FU6TB

RSS090P03 Transistors Switching (-30V, -9.0A) RSS090P03 External dimensions (Unit : mm) Features 1) Low On-resistance. SOP82) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 3.9 Application 6.0Power switching, DC / DC converter. 0.4Min.Each lead has same dimensions Structure Silicon P-channel MOS FET Packaging specifications Eq

 8.2. Size:1428K  cn vbsemi
 rss090p03.pdf

RSS090N03FU6TB RSS090N03FU6TB

RSS090P03www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PC

 9.1. Size:120K  rohm
 rss095n05.pdf

RSS090N03FU6TB RSS090N03FU6TB

RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 Structure External dimensions (Unit : mm) Silicon N-channel SOP85.0MOS FET 1.750.4(8) (5) Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). (1) (4) 0.21.271pin markEach lead has same dimensions Applications Power switching , DC / DC converter , Inverter Packaging di

 9.2. Size:894K  cn vbsemi
 rss095n05.pdf

RSS090N03FU6TB RSS090N03FU6TB

RSS095N05www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous R

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