Справочник MOSFET. RTR030N05FRA

 

RTR030N05FRA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RTR030N05FRA
   Маркировка: PV
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.2 nC
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.067 Ohm
   Тип корпуса: TSMT3

 Аналог (замена) для RTR030N05FRA

 

 

RTR030N05FRA Datasheet (PDF)

 ..1. Size:1024K  rohm
 rtr030n05fra.pdf

RTR030N05FRA RTR030N05FRA

AEC-Q101 Qualified2.5V Drive Nch MOSFET RTR030N05 RTR030N05FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol :

 5.1. Size:216K  rohm
 rtr030n05.pdf

RTR030N05FRA RTR030N05FRA

2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PV (3) Drain Application I

 5.2. Size:215K  rohm
 rtr030n05tl.pdf

RTR030N05FRA RTR030N05FRA

2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PV (3) Drain Application I

 8.1. Size:1018K  rohm
 rtr030p02fha.pdf

RTR030N05FRA RTR030N05FRA

RTR030P02FHARTR030P2TransistorsAEC-Q101 Qualified2.5V Drive Pch MOS FET RTR030P02RTR030P02FHA External dimensions (Unit : mm) StructureSilicon P-channel TSMT31.0MAXMOS FET2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimen

 8.2. Size:776K  rohm
 rtr030p02tl.pdf

RTR030N05FRA RTR030N05FRA

 8.3. Size:85K  rohm
 rtr030p02.pdf

RTR030N05FRA RTR030N05FRA

RTR030P02 Transistors 2.5V Drive Pch MOS FET RTR030P02 External dimensions (Unit : mm) Structure Silicon P-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : TV

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