RTR030P02TL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RTR030P02TL
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 140 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TSMT3
Аналог (замена) для RTR030P02TL
RTR030P02TL Datasheet (PDF)
rtr030p02fha.pdf
RTR030P02FHARTR030P2TransistorsAEC-Q101 Qualified2.5V Drive Pch MOS FET RTR030P02RTR030P02FHA External dimensions (Unit : mm) StructureSilicon P-channel TSMT31.0MAXMOS FET2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimen
rtr030p02.pdf
RTR030P02 Transistors 2.5V Drive Pch MOS FET RTR030P02 External dimensions (Unit : mm) Structure Silicon P-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : TV
rtr030n05.pdf
2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PV (3) Drain Application I
rtr030n05fra.pdf
AEC-Q101 Qualified2.5V Drive Nch MOSFET RTR030N05 RTR030N05FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol :
rtr030n05tl.pdf
2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PV (3) Drain Application I
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918