RW1C026ZP - аналоги, параметры транзистора - Справочник транзисторов

RW1C026ZP даташит

..1. Size:2696K rohm
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RW1C026ZP Datasheet Pch -20V -2.5A Middle Power MOSFET lOutline l WEMT6 VDSS -20V RDS(on)(Max.) 70m ID 2.5A PD 0.7W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (WEMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Haloge

8.1. Size:224K rohm
rw1c020un.pdf pdf_icon

1.5V Drive Nch MOSFET RW1C020UN Structure Dimensions (Unit mm) Silicon N-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Space Saving, (1) (2) (3) Small Surface Mount Package (WEMT6). 4) Low voltage drive (1.5V drive). Abbreviated symbol XK Applications Inner circuit Switching (6) (5) (4) 2 Packaging

8.2. Size:1210K rohm
rw1c025zp.pdf pdf_icon

Data Sheet 1.5V Drive Pch MOSFET RW1C025ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(1.5V) Abbreviated symbol ZG Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T2CR 2 Ba

9.1. Size:224K rohm
rw1c015un.pdf pdf_icon

1.5V Drive Nch MOSFET RW1C015UN Structure Dimensions (Unit mm) Silicon N-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) High power package. Low voltage drive. (1.5V) (1) (2) (3) Abbreviated symbol PS Applications Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code T2R Basic ordering unit (pieces) 8000

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