RW1C026ZP - параметры транзистора MOSFET, его аналоги, datasheet

RW1C026ZP Datasheet (PDF)

..1. Size:2696K rohm
rw1c026zp.pdf pdf_icon

RW1C026ZPDatasheetPch -20V -2.5A Middle Power MOSFETlOutlinel WEMT6VDSS-20VRDS(on)(Max.) 70m ID 2.5A PD0.7W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (WEMT6).3) Pb-free lead plating ; RoHS compliant.4) Haloge

8.1. Size:224K rohm
rw1c020un.pdf pdf_icon

1.5V Drive Nch MOSFET RW1C020UN Structure Dimensions (Unit : mm) Silicon N-channel MOSFET WEMT6(6) (5) (4) Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Space Saving, (1) (2) (3)Small Surface Mount Package (WEMT6). 4) Low voltage drive (1.5V drive). Abbreviated symbol : XK Applications Inner circuit Switching (6) (5) (4)2 Packaging

8.2. Size:1210K rohm
rw1c025zp.pdf pdf_icon

Data Sheet1.5V Drive Pch MOSFET RW1C025ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETWEMT6(6) (5) (4)Features1) Low On-resistance.2) Small high power package.(1) (2) (3)3) Low voltage drive.(1.5V)Abbreviated symbol : ZG ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingType Code T2CR2Ba

9.1. Size:224K rohm
rw1c015un.pdf pdf_icon

1.5V Drive Nch MOSFET RW1C015UN Structure Dimensions (Unit : mm) Silicon N-channel MOSFET WEMT6(6) (5) (4) Features 1) Low On-resistance. 2) High power package. Low voltage drive. (1.5V) (1) (2) (3) Abbreviated symbol : PS Applications Switching Packaging specifications Inner circuit Package Taping(6) (5) (4)Type Code T2RBasic ordering unit (pieces) 8000

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .