Справочник MOSFET. SIR468DP

 

SIR468DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIR468DP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 355 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SIR468DP

 

 

SIR468DP Datasheet (PDF)

 ..1. Size:304K  vishay
 sir468dp.pdf

SIR468DP SIR468DP

SiR468DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0057 at VGS = 10 V 40 100 % Rg Tested COMPLIANT 30 13.8 nC 100 % UIS Tested0.0076 at VGS = 4.5 V 40APPLICATIONSPowerPAK SO-8 Low-Side Switch Notebook DC/DCS6.15 mm 5.15 mm

 9.1. Size:336K  vishay
 sir466dp.pdf

SIR468DP SIR468DP

New ProductSiR466DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.0035 at VGS = 10 V 40g 100 % Rg Tested COMPLIANT 30 21.5 nC0.0051 at VGS = 4.5 V 40g 100 % UIS TestedAPPLICATIONSPowerPAK SO-8 DC/DC Converter- Low Side SwitchS D6.

 9.2. Size:305K  vishay
 sir460dp.pdf

SIR468DP SIR468DP

New ProductSiR460DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFET0.0047 at VGS = 10 V 40g 100 % Rg Tested30 16.8 nC0.0061 at VGS = 4.5 V 40g 100 % Avalanche TestedAPPLICATIONSPowerPAK SO-8 Notebook Vcore

 9.3. Size:304K  vishay
 sir462dp.pdf

SIR468DP SIR468DP

SiR462DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A) TrenchFET Power MOSFET0.0079 at VGS = 10 V 100 % Rg Tested30a30 8.8 nC 100 % UIS Tested0.010 at VGS = 4.5 V 30aAPPLICATIONSPowerPAK SO-8 High-Side Switch Server, VRM, POLS6.15

 9.4. Size:509K  vishay
 sir464dp.pdf

SIR468DP SIR468DP

New ProductSiR464DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0031 at VGS = 10 V 50COMPLIANT 100 % Rg and UIS Tested30 26.5 nC0.0038 at VGS = 4.5 V 50APPLICATIONSPowerPAK SO-8 DC/DC Conversion- Low-Side SwitchS Notebook D

 9.5. Size:1077K  cn vbsemi
 sir462dp-t1.pdf

SIR468DP SIR468DP

SIR462DP-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 S

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