SIR874DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIR874DP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 18 nC
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 205 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0094 Ohm
Тип корпуса: SO-8
SIR874DP Datasheet (PDF)
sir874dp.pdf
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New ProductSiR874DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0094 at VGS = 10 V 20 TrenchFET Gen III Power MOSFET25 8 nC0.012 at VGS = 4.5 V 20 Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile Optimized for Hi
sir878adp.pdf
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New ProductSiR878ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.014 at VGS = 10 V 40 100 % Rg and UIS Tested0.0148 at VGS = 7.5 V 100 38 13.9 nC Compliant to RoHS Directive 2002/95/EC0.018 at VGS = 4.5
sir871dp.pdf
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SiR871DPwww.vishay.comVishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD ThunderFET power MOSFETD 8 Low RDS(on) and thermally enhanced packageD 7D 6increase power density5 100 % Rg and UIS tested Material categorization: for definitions of complianceplease see www.vishay.com/doc?9991212 SS3 S APPLICATIONS4 S1
sir878dp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiR878DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.014 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested0.0148 at VGS = 7.5 V 100 38 13.6 nC 100 % UIS Tested0.019 at VGS = 4.5 V 34 Compliant to RoHS Dire
sir870dp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiR870DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0060 at VGS = 10 V Material categorization:60For definitions of compliance please see0.0064 at VGS = 7.5 V 100 60 26.7 nCwww.vishay.com/doc?999120.0078 at VGS = 4.5 V 60APPL
sir872dp.pdf
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SiR872DPVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Qg (Typ.)ID (A) 100 % Rg and UIS Tested0.0180 at VGS = 10 V 53.7 Material categorization:150 31.5 nC0.0200 at VGS = 7.5 V For definitions of compliance please see51www.vishay.com/doc?99912PowerPAK SO-8APPLICATIONS F
sir873dp.pdf
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SiR873DPwww.vishay.comVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET power MOSFETD 8D 7 Very low RDS(ON) minimizes power loss D 6from conduction5 100 % Rg and UIS tested Material categorization: 1for definitions of compliance please see 2 Swww.vishay.com/doc?999123 S4 S1GAPPLICATIONS STop View
sir870adp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiR870ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition0.0066 at VGS = 10 V 60 TrenchFET Power MOSFET0.0070 at VGS = 7.5 V 100 % Rg and UIS Tested100 60 25.5 nC Compliant to RoHS Directive 2002/95/EC0.0105 at VGS = 4.5
sir876dp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiR876DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0108 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested0.0114 at VGS = 7.5 V 100 40 16.9 nC 100 % UIS Tested0.0145 at VGS = 4.5 V 40 Compliant to RoHS Dire
sir872adp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SiR872ADPVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)g Qg (Typ.) 100 % Rg and UIS Tested0.0180 at VGS = 10 V 53.7 Material categorization:150 22.8 nC0.0230 at VGS = 7.5 V For definitions of compliance please see45www.vishay.com/doc?99912PowerPAK SO-8APPLICATIONS
sir876adp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiR876ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.0108 at VGS = 10 V 40 100 % Rg and UIS Tested0.0114 at VGS = 7.5 V 100 40 16.3 nC Compliant to RoHS Directive 2002/95/EC0.0145 at VGS = 4.
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
![SIR874DP](https://alltransistors.com/images/us.png)
![SIR874DP](https://alltransistors.com/images/es.png)
![SIR874DP](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: MPVD5N50CCFD | MPVU5N50CCFD | MPVA7N65F | MPVD4N70F | MPVU4N70F | MPVA4N70F | MPVD4N65F | MPVU4N65F | MPVA4N65F | MPVD2N65BK | MPVU2N65BK | MPVA2N65BK | MPVP20N65F | MPVA20N65F | MPVA20N50F | MPVT20N50B