Справочник MOSFET. SIR876DP

 

SIR876DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIR876DP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 31.8 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 960 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0108 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SIR876DP

 

 

SIR876DP Datasheet (PDF)

 ..1. Size:507K  vishay
 sir876dp.pdf

SIR876DP SIR876DP

New ProductSiR876DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0108 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested0.0114 at VGS = 7.5 V 100 40 16.9 nC 100 % UIS Tested0.0145 at VGS = 4.5 V 40 Compliant to RoHS Dire

 8.1. Size:504K  vishay
 sir876adp.pdf

SIR876DP SIR876DP

New ProductSiR876ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.0108 at VGS = 10 V 40 100 % Rg and UIS Tested0.0114 at VGS = 7.5 V 100 40 16.3 nC Compliant to RoHS Directive 2002/95/EC0.0145 at VGS = 4.

 9.1. Size:516K  vishay
 sir878adp.pdf

SIR876DP SIR876DP

New ProductSiR878ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.014 at VGS = 10 V 40 100 % Rg and UIS Tested0.0148 at VGS = 7.5 V 100 38 13.9 nC Compliant to RoHS Directive 2002/95/EC0.018 at VGS = 4.5

 9.2. Size:392K  vishay
 sir871dp.pdf

SIR876DP SIR876DP

SiR871DPwww.vishay.comVishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD ThunderFET power MOSFETD 8 Low RDS(on) and thermally enhanced packageD 7D 6increase power density5 100 % Rg and UIS tested Material categorization: for definitions of complianceplease see www.vishay.com/doc?9991212 SS3 S APPLICATIONS4 S1

 9.3. Size:182K  vishay
 sir878dp.pdf

SIR876DP SIR876DP

New ProductSiR878DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.014 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested0.0148 at VGS = 7.5 V 100 38 13.6 nC 100 % UIS Tested0.019 at VGS = 4.5 V 34 Compliant to RoHS Dire

 9.4. Size:185K  vishay
 sir870dp.pdf

SIR876DP SIR876DP

New ProductSiR870DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0060 at VGS = 10 V Material categorization:60For definitions of compliance please see0.0064 at VGS = 7.5 V 100 60 26.7 nCwww.vishay.com/doc?999120.0078 at VGS = 4.5 V 60APPL

 9.5. Size:503K  vishay
 sir872dp.pdf

SIR876DP SIR876DP

SiR872DPVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Qg (Typ.)ID (A) 100 % Rg and UIS Tested0.0180 at VGS = 10 V 53.7 Material categorization:150 31.5 nC0.0200 at VGS = 7.5 V For definitions of compliance please see51www.vishay.com/doc?99912PowerPAK SO-8APPLICATIONS F

 9.6. Size:190K  vishay
 sir873dp.pdf

SIR876DP SIR876DP

SiR873DPwww.vishay.comVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET power MOSFETD 8D 7 Very low RDS(ON) minimizes power loss D 6from conduction5 100 % Rg and UIS tested Material categorization: 1for definitions of compliance please see 2 Swww.vishay.com/doc?999123 S4 S1GAPPLICATIONS STop View

 9.7. Size:476K  vishay
 sir870adp.pdf

SIR876DP SIR876DP

New ProductSiR870ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition0.0066 at VGS = 10 V 60 TrenchFET Power MOSFET0.0070 at VGS = 7.5 V 100 % Rg and UIS Tested100 60 25.5 nC Compliant to RoHS Directive 2002/95/EC0.0105 at VGS = 4.5

 9.8. Size:643K  vishay
 sir874dp.pdf

SIR876DP SIR876DP

New ProductSiR874DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0094 at VGS = 10 V 20 TrenchFET Gen III Power MOSFET25 8 nC0.012 at VGS = 4.5 V 20 Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile Optimized for Hi

 9.9. Size:309K  vishay
 sir872adp.pdf

SIR876DP SIR876DP

SiR872ADPVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)g Qg (Typ.) 100 % Rg and UIS Tested0.0180 at VGS = 10 V 53.7 Material categorization:150 22.8 nC0.0230 at VGS = 7.5 V For definitions of compliance please see45www.vishay.com/doc?99912PowerPAK SO-8APPLICATIONS

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