SIR876DP - описание и поиск аналогов

 ..1. Size:507K  vishay
 sir876dp.pdf 

New Product SiR876DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0108 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested 0.0114 at VGS = 7.5 V 100 40 16.9 nC 100 % UIS Tested 0.0145 at VGS = 4.5 V 40 Compliant to RoHS Dire

 8.1. Size:504K  vishay
 sir876adp.pdf 

New Product SiR876ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.0108 at VGS = 10 V 40 100 % Rg and UIS Tested 0.0114 at VGS = 7.5 V 100 40 16.3 nC Compliant to RoHS Directive 2002/95/EC 0.0145 at VGS = 4.

 9.1. Size:516K  vishay
 sir878adp.pdf 

New Product SiR878ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.014 at VGS = 10 V 40 100 % Rg and UIS Tested 0.0148 at VGS = 7.5 V 100 38 13.9 nC Compliant to RoHS Directive 2002/95/EC 0.018 at VGS = 4.5

 9.2. Size:392K  vishay
 sir871dp.pdf 

 9.3. Size:182K  vishay
 sir878dp.pdf 

New Product SiR878DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.014 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested 0.0148 at VGS = 7.5 V 100 38 13.6 nC 100 % UIS Tested 0.019 at VGS = 4.5 V 34 Compliant to RoHS Dire

 9.4. Size:185K  vishay
 sir870dp.pdf 

New Product SiR870DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0060 at VGS = 10 V Material categorization 60 For definitions of compliance please see 0.0064 at VGS = 7.5 V 100 60 26.7 nC www.vishay.com/doc?99912 0.0078 at VGS = 4.5 V 60 APPL

 9.5. Size:503K  vishay
 sir872dp.pdf 

SiR872DP Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. Qg (Typ.) ID (A) 100 % Rg and UIS Tested 0.0180 at VGS = 10 V 53.7 Material categorization 150 31.5 nC 0.0200 at VGS = 7.5 V For definitions of compliance please see 51 www.vishay.com/doc?99912 PowerPAK SO-8 APPLICATIONS F

 9.6. Size:190K  vishay
 sir873dp.pdf 

SiR873DP www.vishay.com Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET power MOSFET D 8 D 7 Very low RDS(ON) minimizes power loss D 6 from conduction 5 100 % Rg and UIS tested Material categorization 1 for definitions of compliance please see 2 S www.vishay.com/doc?99912 3 S 4 S 1 G APPLICATIONS S Top View

 9.7. Size:476K  vishay
 sir870adp.pdf 

New Product SiR870ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.0066 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0070 at VGS = 7.5 V 100 % Rg and UIS Tested 100 60 25.5 nC Compliant to RoHS Directive 2002/95/EC 0.0105 at VGS = 4.5

 9.8. Size:643K  vishay
 sir874dp.pdf 

New Product SiR874DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0094 at VGS = 10 V 20 TrenchFET Gen III Power MOSFET 25 8 nC 0.012 at VGS = 4.5 V 20 Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile Optimized for Hi

 9.9. Size:309K  vishay
 sir872adp.pdf 

SiR872ADP Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)g Qg (Typ.) 100 % Rg and UIS Tested 0.0180 at VGS = 10 V 53.7 Material categorization 150 22.8 nC 0.0230 at VGS = 7.5 V For definitions of compliance please see 45 www.vishay.com/doc?99912 PowerPAK SO-8 APPLICATIONS