RF1K49093. Аналоги и основные параметры

Наименование производителя: RF1K49093

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm

Тип корпуса: MS012AA

Аналог (замена) для RF1K49093

- подборⓘ MOSFET транзистора по параметрам

 

RF1K49093 даташит

 ..1. Size:141K  intersil
 rf1k49093.pdf pdf_icon

RF1K49093

RF1K49093 Data Sheet August 1999 File Number 3969.5 2.5A, 12V, 0.130 Ohm, Logic Level, Dual Features P-Channel LittleFET Power MOSFET 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits,

 6.1. Size:248K  fairchild semi
 rf1k49090.pdf pdf_icon

RF1K49093

RF1K49090 Data Sheet January 2002 3.5A, 12V, 0.050 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum u

 6.2. Size:247K  intersil
 rf1k49092.pdf pdf_icon

RF1K49093

RF1K49092 Data Sheet August 1999 File Number 3968.5 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Features Level, Complementary LittleFET Power 3.5A, 12V (N-Channel) MOSFET 2.5A, 12V (P-Channel) This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel) an advanced MegaFET process. This process, which uses rDS(ON) = 0.130 (P-Channel) feature sizes app

 7.1. Size:232K  fairchild semi
 rf1k49088.pdf pdf_icon

RF1K49093

RF1K49088 Data Sheet January 2002 3.5A, 30V, 0.06 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum ut

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... PN4393, PN4416, PN4416A, PSMN003-25W, RF1K49086, RF1K49088, RF1K49090, RF1K49092, IRF530, RF1K49154, RF1K49156, RF1K49157, RF1K49211, RF1K49221, RF1K49223, RF1K49224, RF1S22N10SM