APT10026L2FLLG. Аналоги и основные параметры
Наименование производителя: APT10026L2FLLG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 893 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 1268 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
Тип корпуса: TO-264MAX
Аналог (замена) для APT10026L2FLLG
- подборⓘ MOSFET транзистора по параметрам
APT10026L2FLLG даташит
apt10026l2fllg.pdf
APT10026L2FLL 1000V 38A 0.260 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally
apt10026l2fll.pdf
APT10026L2FLL 1000V 38A 0.260W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speed
apt10026l2fl.pdf
APT10026L2FLL 1000V 38A 0.260W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speed
apt10026l2ll.pdf
APT10026L2LL 1000V 38A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent
Другие IGBT... SIRA10DP, SIRA12DP, SIRA14DP, SIRA18DP, APT1001R6BFLLG, APT1001R6SFLLG, APT1001RSVFR, APT1001RSVRG, IRFZ44N, APT1002R4BNR, APT1002RBNR, APT10030L2VFRG, APT10035B2FLLG, APT10035B2LLG, APT10035LFLLG, APT10035LLLG, APT1003RBFLLG
History: DMT6005LPS-13
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